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2STW4466 数据表(PDF) 4 Page - STMicroelectronics |
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2STW4466 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Electrical characteristics 2STW4466 4/10 2 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 4. Electrical characteristics Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5% Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 100V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 6V 0.1 µA V(BR)EBO Collector-emitter breakdown voltage (IC = 0) IE = 1mA 6V V(BR)CBO Collector-emitter breakdown voltage (IE = 0) IC = 100µA 100 V V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 50mA 80 V VCE(sat) (1) Collector-emitter saturation voltage IC = 2A IB = 200mA IC = 6A IB = 600mA 0.6 1.5 V V VBE (1) Base-emitter voltage VCE = 5V IC = 5A 1.5 V hFE DC current gain IC = 2A VCE = 4V 50 120 fT Transition frequency IC = 0.5A VCE = 12V 20 MHz CCBO Collector-base capacitance IE = 0 VCB = 10V f = 1MHz 50 pF ton tstg toff Turn-on time Storage time Fall time IC = 3A VCC = 30V IB1 = -IB2 = 0.3A 0.15 1.5 0.1 ns ns ns |
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