BD442 datasheet(3/9 Pages) STMICROELECTRONICS

部件名	BD442

功能描述	PNP power transistor

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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BD442

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 3.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -80 V

-0.1

ICES

Collector cut-off current

(VBE = 0)

VCE = -80 V

-0.1

IEBO

Emitter cut-off current

(IC = 0)

VEB = -5 V

-1

VCEO(sus)

(1)

Pulsed duration = 300 ms, duty cycle

≥ 1.5%.

Collector-emitter

sustaining voltage

(IB = 0)

IC = -100 mA

-80

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -2 A __

IB = -0.2 A

-0.8

VBE

(1)

Base-emitter voltage

IC = -10 mA_

VCE = -5 V

IC = -2 A_

VCE = -1 V

-0.58

-1.5

hFE

(1)

DC current gain

IC = -10 mA__ VCE = -5 V

IC = -500 mA_ VCE = -1 V

IC = -2 A_

VCE = -1 V

130

140

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