MJD31C datasheet(3/9 Pages) STMICROELECTRONICS

部件名	MJD31C

功能描述	Low voltage NPN power transistor

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 9 page

MJD31CT4-A

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

2.1

Electrical characteristic (curves)

Table 2.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 100V

µA

ICEO

Collector cut-off current

(IB = 0)

VCB = 60V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

0.1

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =30mA

100

VCE(sat) (1) Collector-emitter

saturation voltage

IC = 3A

IB = 375mA

1.2

VBE(on) (1) Base-emitter on voltage

IC = 3A

VCE= 4V

1.8

hFE

DC current gain

IC = 1A

_ _ VCE =4V

IC = 3A

VCE =4V

Figure 1.

Safe operating area

Figure 2.

Derating curve

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