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D1802 数据表(PDF) 3 Page - STMicroelectronics

部件名 D1802
功能描述  Low voltage fast-switching NPN power transistor
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

D1802 数据表(HTML) 3 Page - STMicroelectronics

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STD1802T4-A
Electrical characteristics
3/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 40V
0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = 4V
0.1
µA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC =100µA
80
V
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC =1mA
60
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE =100µA
6V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =2A
_ _ IB =100mA
IC =3A __ _ IB =150mA
150
200
300
400
mV
mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC =2A
_ _ IB =100mA
0.9
1.2
V
hFE (1)
DC current gain
IC =100mA
VCE =2V
IC =3A
VCE =2V
200
100
400
fT
Transition frequency
VCE =10V
IC =50mA
150
MHz
CCBO
Collector-base
capacitance
VCB =10V
f = 1MHz
50
pF
tON
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
IC =1A
VCC =30V
IB1 =-IB2 =0.1A
50
1.35
120
ns
µs
ns



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