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D2805 数据表(PDF) 3 Page - STMicroelectronics

部件名 D2805
功能描述  Low voltage fast-switching PNP power transistor
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

D2805 数据表(HTML) 3 Page - STMicroelectronics

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STD2805
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -60V
0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -5V
0.1
µA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC =-100µA
-60
V
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC =-1mA
-60
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE =-100µA
-6
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =-100mA _ IB =-5mA
IC =-2A
_ _ IB =-50mA
IC =-3A ___ IB =-150mA
IC =-5A ___ IB =-200mA
-150
-200
-50
-300
-400
-600
mV
mV
mV
mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC =-2A _ _ IB =-50mA
-0.9
-1.2
V
hFE (1)
DC current gain
IC =-100mA
VCE =-2V
IC =-5A
VCE =-2V
IC =-10A
VCE =-2V
200
85
20
400
fT
Transition frequency
VCE =-10V
IC =-50mA
150
MHz
CCBO
Collector-base
capacitance
VCB =-10V
f =1MHz
60
pF
tON
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
VCC = -30V
IC = -1A
IB1 =-IB2 = -0.1A
80
600
70
ns
ns
ns



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