STGP10NC60H datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STGP10NC60H

功能描述	N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 13 page

Electrical characteristics

STGP10NC60H

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 5A

VGE= 15V, IC= 5A, Tc= 125°C

1.9

1.7

2.5

gfs

Forward transconductance

VCE = 15V, IC= 5A

3.5

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

365

8.3

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 5A,

VGE = 15V,

(see Figure 16)

19.2

4.5

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