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STGP19NC60S 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGP19NC60S
功能描述  N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP19NC60S 数据表(HTML) 9 Page - STMicroelectronics

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STGP19NC60S
Electrical characteristics
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2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
●
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
PD = ∆T / RTHJ-C
considering
∆T = TJ - TC = 125 °C- 75 °C = 50°C
●
The conduction losses are:
Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125°C.
●
Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
PSW = (EON + EOFF) * freq.
Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V,
VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see
Note 1), while the tail of the collector current is included in the EOFF measurements.



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