STN878 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Electrical characteristics

STN878

4/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = 30 V

VCB = 30 V;

TC = 100 °C

100

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = 6 V

µA

V(BR)CEO

(1)

Pulsed duration = 300 ms, duty cycle

≤1.5 %

Collector-emitter

breakdown voltage

(IB =0)

IC = 10 mA

V(BR)CBO

Collector-base

breakdown voltage

(IE =0)

IC = 100 µA

V(BR)EBO

Emitter-base breakdown

voltage (IC =0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.5 A

IB = 5 mA

IC = 2 A

IB = 50 mA

IC = 5 A

IB = 0.25 A

IC = 6 A

IB = 0.25 A

IC = 8 A

IB = 0.4 A

IC = 10 A

IB = 0.5 A

0.7

1.2

0.15

0.35

0.7

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 2 A

IB = 50 mA

IC = 6 A

IB = 0.25 A

1.2

1.1

hFE

(1)

DC current gain

IC = 10 mA

VCE = 1 V

IC = 500 mA

VCE = 1 V

IC = 5 A

VCE = 1 V

IC = 5 A

VCE = 1 V

Tc = 100 °C

IC = 8 A

VCE = 1 V

IC = 10 A

VCE = 1 V

120

100

200

100

300

Resistive load

Delay time

Rise time

Storage time

Fall time

IC = 3 A

VCC = 20 V

IB1 = -IB2 = 60 mA

see Figure 8

180

160

250

220

210

300

100

STN878 数据表(PDF) 4 Page - STMicroelectronics

STN878 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载

链接网址

STN878 数据表(PDF) 4 Page - STMicroelectronics

STN878 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表 下载

链接网址

数据表下载