BV42 datasheet(2/5 Pages) STMICROELECTRONICS

部件名	BV42

功能描述	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-ambient

Max

120

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 700 V

Tj = 125

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 9 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

L = 25mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.25 A

IB = 0.05 A

IC = 0.5 A

IB = 0.125 A

IC = 0.75 A

IB = 0.25 A

0.2

0.3

0.4

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.25 A

IB = 0.05 A

IC = 0.5 A

IB = 0.125 A

1.2

hFE

∗

DC Current Gain

IC = 0.4 A

VCE = 5 V

IC = 0.8 A

VCE = 5 V

INDUCTIVE LOAD

Fall Time

IC = 0.25 A

Vclamp = 300 V

IB1 = -IB2 = 50 mA

L = 3 mH

0.3

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

Safe Operating Area

Derating Curve

STBV42

2/5

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