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STD15N06 数据表(PDF) 3 Page - STMicroelectronics |
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STD15N06 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =30 V ID =7.5 A RG =47 Ω VGS =10 V (see test circuit figure) 40 170 60 250 ns ns (di/dt) on Turn-on Current Slope VDD =40 V ID =15 A RG =47 Ω VGS =10 V (see test circuit figure) 170 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =48 V ID =15 A VGS =10 V 23 10 8 34 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =48 V ID =15 A RGS =47 Ω VGS =10 V (see test circuit figure) 50 70 130 70 100 170 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 15 60 A A VSD ( ∗) Forward On Volt age ISD =15 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 15 A di/dt = 100 A/ µs VDD =25 V Tj = 150 oC 60 0.16 5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STD15N06 3/10 |
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