STD2N50 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STD2N50

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STD2N50

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 4.5

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STD2N50

500 V

< 5. 5

Ω

2A

December 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS = 0)

500

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont inuous) at T c =25

oC2

A

ID

Drain Current (cont inuous) at T c =100

oC1.25

A

IDM(

•)

Drain Current (pulsed)

8

A

Ptot

Total Dissipation at Tc =25

oC45

W

Derating Factor

0. 36

W/

oC

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1

3

2

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/10

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