STD2NB40

N - CHANNEL 400V - 3.5

Ω - 2A - IPAK/DPAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX "T4" FOR ORDERING IN TAPE

& REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

July 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

400

V

Ω)

400

V

Gate-source Voltage

± 30

V

A

1.26

A

•)

Drain Current (pulsed)

8

A

W

Derating Factor

0.32

W/

dv/dt

Peak Diode Recovery voltage slope

3.5

V/ns

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

TYPE

STD2NB40

400 V

< 4

Ω

2 A

3

2

1

IPAK

TO-251

(Suffix "-1")

1

3

DPAK

TO-252

(Suffix "T4")

®

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