STD2NB80

N - CHANNEL 800V - 4.6

Ω - 1.9A - IPAK/DPAK

PowerMESH

™ MOSFET

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

800

V

Ω)

800

V

G ate-source Voltage

± 30

V

A

A

•)

Drain Current (pulsed)

7.6

A

W

Derating Factor

0.44

W /

Peak Diode Recovery volt age slope

4.5

V/ns

Storage Temperat ure

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

TYPE

ST D2NB80

800 V

< 6.5

Ω

1.9 A

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

®

1/9