STD30NF06 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STD30NF06

功能描述	N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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March 2002

.

STD30NF06

N-CHANNEL 60V - 0.020

Ω - 28A IPAK/DPAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.020Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL , AUDIO AMPLIFIERS

s

SOLENOID AND RELAY DRIVERS

s

DC-DC & DC-AC CONVERTERS

TYPE

VDSS

RDS(on)

ID

STD30NF06

60 V

<0.028

Ω

28 A

3

2

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD ≤28A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 15A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

28

A

ID

Drain Current (continuous) at TC = 100°C

20

A

IDM(•)

Drain Current (pulsed)

112

A

Ptot

Total Dissipation at TC = 25°C

70

W

Derating Factor

0.47

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

10

V/ns

EAS (2)

Single Pulse Avalanche Energy

230

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STD30NF06

制造商	部件名	数据表	功能描述
Guangdong Youtai Semico...	STD30NF06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
EVER SEMICONDUCTOR CO.,...	STD30NF06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET Rev:2023A2
VBsemi Electronics Co.,...	STD30NF06-1	963Kb / 7P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	STD30NF06L	461Kb / 10P	N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET Jul-2002
Guangdong Youtai Semico...	STD30NF06L	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET

More results

类似说明 - STD30NF06

制造商	部件名	数据表	功能描述
STMicroelectronics	STD12NF06	443Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Dec-2001
	STD12NF06L	444Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Jun-2003
	STD40NF06LZ	296Kb / 8P	N-CHANNEL 60V - 0.020 ohm - 40A DPAK Zener-Protected STripFET™II POWER MOSFET October 2002
	STD16NF06L	442Kb / 11P	N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET 10-Jan-2006
	STD20NF06L	416Kb / 14P	N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET 03-Jul-2006
	STD12NF06L	323Kb / 14P	N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET 19-Feb-2007
	STD12NF06-1	333Kb / 14P	N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™II Power MOSFET 19-Feb-2007
	STD16NF06L	362Kb / 14P	N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET??II Power MOSFET 19-Feb-2007
	STD10PF06-1	299Kb / 9P	P-CHANNEL 60V - 0.18 Ohm - 10A IPAK/DPAK STripFET II POWER MOSFET Mar-2002
	STD20NF06LT4	420Kb / 14P	N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET 03-Jul-2006

More results

STD30NF06 数据表(PDF) 1 Page - STMicroelectronics

STD30NF06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD30NF06

类似说明 - STD30NF06

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链接网址

STD30NF06 数据表(PDF) 1 Page - STMicroelectronics

STD30NF06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD30NF06

类似说明 - STD30NF06

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