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February 2002

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STD35NF3LL

STD35NF3LL-1

N-CHANNEL 30V - 0.014

Ω - 35A IPAK/DPAK

STripFET™ II POWER MOSFET

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

LOW THRESHOLD DRIVE

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This application specific Power MOSFET is the third

genaration of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS

TYPE

STD35NF3LL

STD35NF3LL-1

30 V

30 V

< 0.0195

Ω

< 0.0195

Ω

35 A

35 A

3

2

1

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

35

A

25

A

Drain Current (pulsed)

140

A

50

W

Derating Factor

0.33

W/°C

Single Pulse Avalanche Energy

300

mJ

Storage Temperature

-55 to 175

°C

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM