STD3N30 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STD3N30

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STD3N30

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 1.1

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

s

HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

INDUSTRIAL ACTUATORS

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

s

PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP

BALLASTS

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STD3N30

300 V

< 1. 4

Ω

3A

December 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS = 0)

300

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)

300

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont inuous) at T c =25

oC3

A

ID

Drain Current (cont inuous) at T c =100

oC2

A

IDM(

•)

Drain Current (pulsed)

12

A

Ptot

Total Dissipation at Tc =25

oC50

W

Derating Factor

0.4

W/

oC

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1

3

2

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/10

类似零件编号 - STD3N30

制造商	部件名	数据表	功能描述
STMicroelectronics	STD3N30L	170Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996

More results

类似说明 - STD3N30

制造商	部件名	数据表	功能描述
STMicroelectronics	STD2NA60	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STD3N30L	170Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STD3NA50	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STH60N10	246Kb / 11P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
	STP15N05L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP32N05L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP32N06L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP53N08	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
	STP5N30L	198Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	IRF630FI	190Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

More results

STD3N30 数据表(PDF) 1 Page - STMicroelectronics

STD3N30 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD3N30

类似说明 - STD3N30

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链接网址

STD3N30 数据表(PDF) 1 Page - STMicroelectronics

STD3N30 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD3N30

类似说明 - STD3N30

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