STD3NB30

N - CHANNEL 300V - 1.8

Ω - 3.2A - DPAK

PowerMESH

™ MOSFET

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

1

3

DPAK

TO-252

(Suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

300

V

Ω)

300

V

G ate-source Volt age

± 30

V

A

A

•)

Drain Current (pulsed)

12.8

A

W

Derating Factor

0.32

W /

Peak Diode Recovery voltage slope

5.5

V/ns

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

TYPE

ST D3NB30

300 V

< 2

Ω

3.2 A

1/8