STD40NF02L

N-CHANNEL 20V - 0.01

Ω - 40A DPAK

LOW GATE CHARGE STripFET

™ POWER MOSFET

TARGET DATA

s

Ω

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size

™” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

20/01/2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

20

V

Ω)20

V

G ate-source Volt age

± 20

V

•)

A

•)

A

••) Drain Current (pulsed)

80

A

W

Derating Factor

0.37

W /

Storage Temperature

-65 to 175

Max. Operating Junction Temperature

175

(

•) Current Limited By The Package

(

••) Pulse width limited by safe operating area

T YPE

STD40NF02L

20 V

< 0.013

Ω

40 A

ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

1

3

DPAK

TO-252

(Suffix ”T4”)

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