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SPD5624 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SPD5624 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00019B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPD56__ __ __ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level ⏐ ⏐ ⏐ L Package __ = Axial Leaded SMS = Surface Mount Square Tab ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Voltage 24 = 200 V 25 = 400 V 26 = 600 V 27 = 800 V 28 = 1000 V SPD5624 - SPD5628 and SPD5624SMS - SPD5628SMS 3 AMP 200-1000 Volts 5 μsec STANDARD RECOVERY RECTIFIER Features: • Fast Recovery: 5 μsec Max. • PIV to 1000 Volts • Low Reverse Leakage Current • Hermetically Sealed • Single Chip Construction • High Surge Rating • Low Thermal Resistance • Available in Axial Leaded and Surface Mount Versions • Available in Fast, Ultra Fast, and Hyper Fast Versions – Contact Factory • Replacement for 1N5624-1N5628 and 1N5624US- 1N5628US Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SPD5624 & SPD5624SMS SPD5625& SPD5625SMS SPD5626 & SPD5626SMS SPD5627 & SPD5627SMS SPD5628 & SPD5628SMS VRRM VRWM VR 200 400 600 800 1000 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Io 3 Amps Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 125 Amps Operating & Storage Temperature Top & Tstg -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 " RθJL 25 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Leaded SMS (Square) |
类似零件编号 - SPD5624 |
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类似说明 - SPD5624 |
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