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April 2002

STD60NF3LL

N-CHANNEL 30V - 0.0075

Ω - 60A DPAK

STripFET™ II POWER MOSFET

s

s

OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

This application specific Power Mosfet is the third

genaration of STMicroelectronics unique “Single

Feature Size

ing transistor shows the best trade-off between on-

resistance ang gate charge. When used as high

and low side in buck regulators, it gives the best

performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STD60NF3LL

30V

<0.0095

Ω

60A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

60

A

43

A

Drain Current (pulsed)

240

A

100

W

Derating Factor

0.67

W/°C

Single Pulse Avalanche Energy

700

mJ

Storage Temperature

– 55 to 175

°C

Operating Junction Temperature

DPAK

1

3

TO-252

INTERNAL SCHEMATIC DIAGRAM