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STD616A 数据表(PDF) 2 Page - STMicroelectronics

部件名 STD616A
功能描述  HIGH VOLTAGE NPN POWER TRANSISTOR
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD616A 数据表(HTML) 2 Page - STMicroelectronics

  STD616A Datasheet HTML 1Page - STMicroelectronics STD616A Datasheet HTML 2Page - STMicroelectronics STD616A Datasheet HTML 3Page - STMicroelectronics STD616A Datasheet HTML 4Page - STMicroelectronics STD616A Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collector Cut -of f
Current (VBE =0 V)
VCE = 1000 V
VCE = 1000 V
Tj =125
oC
50
0.5
µA
mA
VCEO(sus)
Collector-Emit ter
Sustaining Voltage
IC = 100 mA
L = 25 mH
450
V
VBEO
Collector-Base
Sustaining Voltage
IC =1 mA
12
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC =250 mA
IB =65 mA
IC =0.8 A
IB =250 mA
0.3
0.5
V
V
VBE(s at)
∗ Base-Emitter
Saturation Voltage
IC =250 mA
IB =65 mA
IC =0.8 A
IB =250 mA
1.0
1.2
V
V
hFE
∗
DC Current Gain
IC =200
µAVCE =5 V
IC =300 mA
VCE =5 V
IC =480 mA
VCE =5 V
IC =1. 6 A
VCE =5 V
17
25
12
4
ton
ts
tf
RESI STIVE LO AD
Turn O n Time
St orage Time
Fall Time
VCC = 250 V
IC =250 mA
IB1 =65 mA
IB2 =-130 mA
0.2
5
0.65
µs
µs
µs
ton
ts
tf
RESI STIVE LO AD
Turn O n Time
St orage Time
Fall Time
VCC = 250 V
IC =0.8 A
IB1 =160 mA
IB2 =-0.4 A
1
2.5
0.35
µs
µs
µs
ts
tf
INDUCTIVE LO AD
St orage Time
Fall Time
Vcl =300 V
IC =250 mA
IB1 =65 mA
IB2 =-130 mA
L= 200
µH
5
0.5
µs
µs
ts
tf
INDUCTIVE LO AD
Turn O n Time
St orage Time
Fall Time
Vcl =300 V
IC = 0.8 A
IB1 =160 mA
IB2=-0.4 A
L= 200
µH
2.5
0.25
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
STD616A-1
2/5



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