STD6NF10 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STD6NF10

功能描述	N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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June 2001

.

STD6NF10

N-CHANNEL 100V - 0.22

Ω - 6A IPAK/DPAK

LOW GATE CHARGE STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.22 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STD6NF10

100 V

<0.250

Ω

6 A

3

2

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.

(1) ISD ≤6A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 3A, VDD= 50V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

6A

ID

Drain Current (continuos) at TC = 100°C

4A

IDM(•)

Drain Current (pulsed)

24

A

Ptot

Total Dissipation at TC = 25°C

30

W

Derating Factor

0.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

40

V/ns

EAS (2)

Single Pulse Avalanche Energy

200

mJ

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STD6NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STD6NF10	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET 19-Nov-2008
VBsemi Electronics Co.,...	STD6NF10-1	1Mb / 9P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STD6NF10T4	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET 19-Nov-2008
VBsemi Electronics Co.,...	STD6NF10T4	1,010Kb / 7P	N-Channel 100 V (D-S) MOSFET
STMicroelectronics	STD6NF10	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET 19-Nov-2008

More results

类似说明 - STD6NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STD10NF10	458Kb / 14P	N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET 07-Aug-2006
	STD15NF10	412Kb / 13P	N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET 08-Aug-2006
	STD20NF10	303Kb / 9P	N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET Oct-2002
	STD25NF10	437Kb / 9P	N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET™ POWER MOSFET May-2002
	STD25NF10L	451Kb / 9P	N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET Feb-2003
	STD5NE10L	43Kb / 6P	N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET Oct-1998
	STP135N10	204Kb / 8P	N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET Jul-2003
	STD55NH2LL	655Kb / 12P	N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET Mar-2004
	STD6NF10	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET 19-Nov-2008
	STD25NF10LT4	432Kb / 13P	N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET 03-Jun-2006

More results

STD6NF10 数据表(PDF) 1 Page - STMicroelectronics

STD6NF10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD6NF10

类似说明 - STD6NF10

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STD6NF10 数据表(PDF) 1 Page - STMicroelectronics

STD6NF10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD6NF10

类似说明 - STD6NF10

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