STD9N10 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STD9N10

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STD9N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.23

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC9

A

ID

Drain Current (continuous) at Tc =100

oC6

A

IDM(

•)

Drain Current (pulsed)

36

A

Ptot

Total Dissipation at Tc =25

oC45

W

Derat ing Factor

0.3

W/

oC

Tstg

St orage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

ST D9N10

100 V

< 0.27

Ω

9A

March 1996

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/10

类似零件编号 - STD9N10

制造商	部件名	数据表	功能描述
STMicroelectronics	STD9N10	278Kb / 12P	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR 03-May-2004
Inchange Semiconductor ...	STD9N10	360Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STD9N10-1	278Kb / 12P	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR 03-May-2004
VBsemi Electronics Co.,...	STD9N10-1	1Mb / 9P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STD9N10L	66Kb / 6P	N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR Apr-2000

More results

类似说明 - STD9N10

制造商	部件名	数据表	功能描述
STMicroelectronics	STD2NA60	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STD3N30L	170Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STD3NA50	172Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STH60N10	246Kb / 11P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
	STP15N05L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP32N05L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP32N06L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	STP53N08	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
	STP5N30L	198Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Nov-1996
	IRF630FI	190Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

More results

STD9N10 数据表(PDF) 1 Page - STMicroelectronics

STD9N10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD9N10

类似说明 - STD9N10

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STD9N10 数据表(PDF) 1 Page - STMicroelectronics

STD9N10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STD9N10

类似说明 - STD9N10

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