STDID5B datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STDID5B

功能描述	N - CHANNEL 55V - 0.1 ohm - 12A TO-252 STripFET POWER MOSFET

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STDID5B

N - CHANNEL 55V - 0.1

Ω - 12A TO-252

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.1

Ω

s

APPLICATION ORIENTED

CHARACTERIZATION

s

ADD SUFFIX "T4" FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

"Single

Feature

Size

™" strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

55

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)55

V

VGS

Gate-source Voltage

± 20

V

ID(*)

Drain Current (continuous) at Tc = 25

oC12

A

ID

Drain Current (continuous) at Tc = 100

oC8

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Total Dissipation at Tc = 25

o C35

W

Derating Factor

0.23

W/

oC

EAS

(1)

Single Pulse Avalanche Energy

25

mJ

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) starting Tj = 25

oC, ID =12A , VDD = 30V

New RDS(on) spec. starting from July ’98

TYPE

VDSS

RDS(on)

ID

STDID5B

55 V

< 0.12

Ω

12 A

1

3

DPAK

TO-252

(Suffix "T4")

1/6

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类似说明 - STDID5B

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