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STGD3NB60S 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGD3NB60S
功能描述  N-CHANNEL 3A - 600V DPAK Power MESH IGBT
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3NB60S 数据表(HTML) 2 Page - STMicroelectronics

  STGD3NB60S Datasheet HTML 1Page - STMicroelectronics STGD3NB60S Datasheet HTML 2Page - STMicroelectronics STGD3NB60S Datasheet HTML 3Page - STMicroelectronics STGD3NB60S Datasheet HTML 4Page - STMicroelectronics STGD3NB60S Datasheet HTML 5Page - STMicroelectronics STGD3NB60S Datasheet HTML 6Page - STMicroelectronics STGD3NB60S Datasheet HTML 7Page - STMicroelectronics STGD3NB60S Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
3.125
100
1.5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitt er
Breakdown Voltage
IC =250
µAVGE = 0
600
V
ICES
Collector cut-of f
(VGE =0)
VCE =Max Rating
Tj =25
oC
VCE =Max Rating
Tj =125
oC
10
100
µA
µA
IGES
Gat e-Emitter Leakage
Current (VCE =0)
VGE =
± 20 V
VCE =0
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGE(th)
Gat e Threshold
Voltage
VCE =VGE
IC = 250
µA2.5
5
V
VCE(SAT )
Collector-Emitt er
Sat uration Voltage
VGE =15 V
IC =3 A
VGE =15 V
IC =1 A
1.2
1
1. 5
V
V
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
IC =3 A
1. 7
2.5
S
Cies
Coes
Cres
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VCE = 25V
f = 1MHz
VGE = 0
255
30
5.6
pF
pF
pF
QG
QGE
QGC
Tot al G ate Charge
Gat e-Emitter Charge
Gat e-Collector Charge
VCE = 480 V
IC =3 A
VGE =15 V
18
5.4
5.5
nC
nC
nC
ICL
Lat ching Current
Vclamp =480 V
RG=1k
Ω
Tj = 150
oC
12
A
SWITCHING ON
Symbo l
Parameter
Test Co nditi ons
Min .
T yp.
Max.
Uni t
td(on)
tr
Delay Time
Rise Time
VCC = 480 V
IC =3 A
VGE=15 V
RG =1k
Ω
170
540
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching
Losses
VCC = 480 V
I C =3 A
RG =1k
Ω
V GE =15 V
Tj = 125
oC
30
300
A/
µs
µJ
STGD3NB60S
2/8



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