STGD3NB60SD datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(voff)

td(off)

Eoff(**)

Cross-Over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

VCC = 480 V

IC = 3 A

RGE = 1 k

Ω

VGE = 15 V

1.8

1.0

3.4

0.72

1.15

µs

tr(voff)

td(off)

Eoff(**)

Cross-Over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

VCC = 480 V

IC = 3 A

RGE = 1k

Ω

VGE = 15 V

Tj = 125

2.8

1.45

3.6

1.2

1.8

µs

COLLECTOR-EMITTER DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ifm

Forward Current

Forward Current pulsed

Forward On-Voltage

If = 3 A

If = 1 A

1.55

1.15

1.9

trr

Qrr

Irrm

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

If = 3 A

VR=200 V

dI/dt = 100 A/

µS

Tj = 125

1700

4500

9.5

(

•) Pulse width limited by max. junction temperature

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(**)Losses Include Also The Tail (Jedec Standardization)

Thermal Impedance

STGD3NB60SD

3/8

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