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STGP10NB60SDFP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP10NB60SDFP
功能描述  N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10NB60SDFP 数据表(HTML) 2 Page - STMicroelectronics

  STGP10NB60SDFP Datasheet HTML 1Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 2Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 3Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 4Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 5Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 6Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 7Page - STMicroelectronics STGP10NB60SDFP Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Break-down
Voltage
IC = 250 µA, VGE = 0,
600
V
VBR(CES)
Emitter Collector Break-down
Voltage
IC =1mA, VGE =0,
20
V
ICES
Collector cut-off Current
(VGE =0)
VCE = Max Rating ,Tj =25 °C
VCE = Max Rating ,Tj =125 °C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =± 20V,VCE = 0
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
2.5
5
V
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE =15V, IC = 5 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 125°C
1.15
1.35
1.25
1.8
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V , IC =10 A
5S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1 MHz, VGE =0
610
65
12
pF
pF
pF
Qg
Gate Charge
VCE = 400V, IC =10 A,
VGE =15V
33
nC
ICL
Latching Current
Vclamp= 480V, RG= 1kΩ,
Tj= 125°C
20
A



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