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STGP10NB60SFP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP10NB60SFP
功能描述  N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10NB60SFP 数据表(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
4.7
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Break-down
Voltage
IC = 250 µA, VGE = 0,
600
V
VBR(CES)
Emitter Collector Break-down
Voltage
IC = 1 mA, VGE = 0,
20
V
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating ,Tj =25 °C
VCE = Max Rating ,Tj =125 °C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
2.5
5
V
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE =15V, IC = 5 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 125°C
1.15
1.35
1.25
1.7
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE = 25 V , IC =10 A
5S
Cies
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
610
pF
Coes
Output Capacitance
65
pF
Cres
Reverse Transfer
Capacitance
12
pF
Qg
Gate Charge
VCE = 400V, IC = 10 A,
VGE = 15V
33
nC
ICL
Latching Current
Vclamp= 480V, RG= 1kΩ,
Tj= 125°C
20
A



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