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STGP12NB60HD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGP12NB60HD
功能描述  N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP12NB60HD 数据表(HTML) 3 Page - STMicroelectronics

  STGP12NB60HD Datasheet HTML 1Page - STMicroelectronics STGP12NB60HD Datasheet HTML 2Page - STMicroelectronics STGP12NB60HD Datasheet HTML 3Page - STMicroelectronics STGP12NB60HD Datasheet HTML 4Page - STMicroelectronics STGP12NB60HD Datasheet HTML 5Page - STMicroelectronics STGP12NB60HD Datasheet HTML 6Page - STMicroelectronics STGP12NB60HD Datasheet HTML 7Page - STMicroelectronics STGP12NB60HD Datasheet HTML 8Page - STMicroelectronics STGP12NB60HD Datasheet HTML 9Page - STMicroelectronics  
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STGP12NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
Cross-over Time
Vcc = 480 V, IC = 12A,
RGE =10 Ω ,VGE =15 V
150
ns
tr(Voff)
Off Voltage Rise Time
27
ns
td(off)
Delay Time
76
ns
tf
Fall Time
92
ns
Eoff(**)
Turn-off Switching Loss
0.21
mJ
Ets
Total Switching Loss
0.49
mJ
tc
Cross-over Time
Vcc = 480 V, IC =12 A,
RGE =10 Ω ,VGE =15 V
Tj = 125 °C
230
ns
tr(Voff)
Off Voltage Rise Time
76
ns
td(off)
Delay Time
95
ns
tf
Fall Time
200
ns
Eoff(**)
Turn-off Switching Loss
0.45
mJ
Ets
Total Switching Loss
0.74
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
12
48
A
A
Vf
Forward On-Voltage
If =6A
If =6A,Tj= 125 °C
1.3
1.1
1.9
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If =6A ,VR =50 V,
Tj = 125°C, di/dt = 100 A/
µs
80
240
5.5
ns
nC
A
Thermal Impedance



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