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STGP20NB37LZ 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGP20NB37LZ
功能描述  N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP20NB37LZ 数据表(HTML) 1 Page - STMicroelectronics

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STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLY CLAMPED PowerMESH
™ IGBT
PRELIMINARY DATA
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
®
INTERNAL SCHEMATIC DIAGRAM
April 2000
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
VCES
Collect or-Emitter Voltage (VGS =0)
CLAMPED
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitt er Volt age
CLAMPED
V
IC
Collect or Current (continuous) at Tc =25
oC40
A
IC
Collect or Current (continuous) at Tc =100
oC30
A
ICM(
•)
Collect or Current (pulsed)
80
A
EAS
Single Pulse Energy Tc = 25
oC
700
mJ
Ptot
T otal Dissipation at Tc =25
oC
150
W
Derat ing Factor
1
W /
o C
ESD
ESD (Human Body Model)
4
KV
Tstg
St orage Temperature
-65 t o 175
o C
Tj
Max. O perating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
TYPE
VCES
VCE(s at)
IC
STGP20NB37LZ
CLAMPED
< 2.0 V
20 A
1
2
3
TO-220
1/6


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