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STGD3NB60S 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGD3NB60S
功能描述  N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3NB60S 数据表(HTML) 2 Page - STMicroelectronics

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STGP3NB60S - STGD3NB60S
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
TO-220
DPAK
Rthj-case
Thermal Resistance Junction-case Max
1.92
2.75
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
°C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
10
µA
VCE = Max Rating, TC = 125 °C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =±20V,VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
2.5
5
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V, IC =3 A
VGE =15V, IC =1 A
1.2
1
1.5
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V , IC =3 A
1.7
2.5
S
Cies
Input Capacitance
VCE = 25V,f= 1MHz,VGE =0
255
pF
Coes
Output Capacitance
30
pF
Cres
Reverse Transfer
Capacitance
5.6
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V, IC =3A,
VGE =15V
18
5.4
5.5
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 150°C
RG =1KΩ
12
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VCC =480 V, IC =3 A
RG =1KΩ ,VGE =15V
170
ns
tr
Rise Time
540
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 3 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
300
A/µs
µJ



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