STGP7NB60KDFP datasheet(2/14 Pages) STMICROELECTRONICS

2 / 14 page

STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP

2/14

ABSOLUTE MAXIMUM RATINGS

(

n) Pulse width limited by safe operating area

(1) For “D” version only

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

MAIN PARAMETERS

Symbol

Parameter

Value

Unit

TO-220

D2PAK

TO-220FP

DPAK

VCES

Collector-Emitter Voltage (VGS = 0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC = 25°C

Collector Current (continuous) at TC = 125°C

ICM (n)

Collector Current (pulsed)

If (1)

Forward Current

Ifm (1)

Forward Current Pulsed

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.64

0.28

0.64

W/°C

VISO

Insulation Withstand Voltage A.C.

2500

Tstg

Storage Temperature

– 55 to 150

150

°C

Max. Operating Junction Temperature

TO-220

D2PAK

TO-220FP

DPAK

Rthj-case

Thermal Resistance Junction-case Max

1.32

4.17

1.4

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Rthc-h

Thermal Resistance Case-heatsink Typ

0.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

500

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ±20V , VCE = 0

±100

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250µA

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 7 A

VGE = 15V, IC = 7 A, Tc =100°C

2.3

1.9

2.8

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