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STGW50NB60M 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGW50NB60M
功能描述  N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGW50NB60M 数据表(HTML) 2 Page - STMicroelectronics

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STGW50NB60M
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
°C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.1
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
VCE = Max Rating, TC = 125 °C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =± 20 V,VCE = 0
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250 µA
345
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V, IC =30A@25°C
VGE =15V, IC =30A@100°C
VGE =15V, IC =50A@25°C
VGE =15V, IC =50A@100°C
1.3
1.2
1.5
1.35
1.9
V
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =15V , IC =18 A
22
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE =25V,f= 1MHz, VGE =0
4500
400
70
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V, IC =50 A,
VGE =15 V
231
28
97
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 125°C
RG =10 Ω
300
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC =480 V, IC =50 A
RG =10Ω ,VGE =15V
45
30
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC =50 A
RG=10 Ω , VGE =15 V
Tj = 125°C
1600
800
A/µs
µJ



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