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L6375STR 数据表(PDF) 10 Page - STMicroelectronics

部件名 L6375STR
功能描述  0.5A high-side driver industrial intelligent power switch
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6375STR 数据表(HTML) 10 Page - STMicroelectronics

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Electrical specifications
L6375S
10/17
2.9
Diagnostic logic
The operating conditions of the device are permanently monitored and the following
occurrences are signalled via the DIAG1/DIAG2 open-drain output pins see diagnostic Truth
Table.
Short Circuit versus ground.
Short Circuit versus VS.
Under Voltage (UV)
Over Temperature (OVT)
Open Load, if the output current is less than 3mA (typical value).
2.10
Demagnetization of inductive loads
An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60V
(Vcl), provides safe and fast demagnetization of inductive loads without external clamping
devices. The maximum energy that can be absorbed from an inductive load is specified as
200mJ (at TJ = 85°C)
2.11
Diagnostic truth table
Table 6.
Diagnostic truth table
Diagnostic conditions
Input
Output
Diag1
Diag2
Normal Operation
L
H
L
H
H
H
H
H
Open Load Condition (Io< Iold)
L
H
L
H
H
L
H
H
Short to VS
L
H
H
H
L
L
H
H
Short Circuit to Ground (IO = ISC)
(1)
(pin ON-DELAY grounded)
1.
A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS
is initially turned on.
H
L
X
L
H
H
H
H
Output DMOS Open
L
H
L
L
H
L
H
H
Overtemperature
L
H
L
L
H
H
L
L
Supply Undervoltage (VS< Vsth2)
L
H
L
L
L
L
L
L



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