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L6392D 数据表(PDF) 9 Page - STMicroelectronics |
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L6392D 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 19 page ![]() L6392 Electrical characteristics 9/19 Symbol Pin Parameter Test condition Min Typ Max Unit ILK High voltage leakage current Vhvg = Vout = Vboot = 600 V 10 µA Rdson Bootstrap driver on resistance (1) LVG ON 120 Ω Driving buffers section Iso 10, 13 High/low side source short circuit current Vi= Vih (tp < 10 ms) 270 mA Isi High/low side sink short circuit current Vi= Vil (tp < 10 ms) 430 mA Logic inputs Vil 1, 2, 3 Low level logic threshold voltage 0.83 V Vih High level logic threshold voltage 2.21 V IHINh 3 HIN logic “1” input bias current HIN = 15 V 175 260 µA IHINl HIN logic “0” input bias current HIN = 0 V 1 µA ILINh 1 LIN logic “1” input bias current LIN = 0 V 6 40 µA ILINl LIN logic “0” input bias current LIN = 15 V 1 µA ISDh 2 SD logic “1” input bias current SD = 15 V 30 100 µA ISDl SD logic “0” input bias current SD = 0 V 1 µA 1. RDSon is tested in the following way: RDSon = [(VCC - VCBOOT1) - (VCC - VCBOOT2)] / [I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)] where I1 is pin 16 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2 Table 8. DC operation electrical characteristics (VCC = 15 V;TJ = +25 °C) |
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