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L6393D013TR 数据表(PDF) 15 Page - STMicroelectronics |
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L6393D013TR 数据表(HTML) 15 Page - STMicroelectronics |
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15 / 20 page ![]() L6393 Bootstrap driver 15/20 where Qgate is the gate charge of the external power MOS, RDSon is the on resistance of the bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30 nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 µs. In fact: Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 6. Bootstrap driver V drop 30nC 5 µs --------------- 120 Ω 0.7V ∼ ⋅ = TO LOAD D99IN1067 H.V. HVG ab LVG HVG LVG CBOOT TO LOAD H.V. CBOOT DBOOT BOOT VS VS VOUT BOOT VOUT |
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