LF151DT datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

LF351

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Electrical characteristics

Table 3.

Electrical characteristics at VCC = ±15 V, Tamb = +25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max.

Unit

Vio

Input offset voltage (Rs = 10kΩ)

Tmin ≤ Tamb ≤ Tmax

310

DVio

Input offset voltage drift

µV/°C

Iio

Input offset current (1)

Tmin ≤ Tamb ≤ Tmax

100

Iib

Input bias current (1)

Tmin ≤ Tamb ≤ Tmax

200

Avd

Large signal voltage gain

(RL = 2kΩ, Vo = ±10V)

Tmin ≤ Tamb ≤ Tmax

200

V/mV

SVR

Supply voltage rejection ratio (RS = 10kΩ)

Tmin ≤ Tamb ≤ Tmax

ICC

Supply current, no load

Tmin ≤ Tamb ≤ Tmax

1.4

3.4

Vicm

Input common mode voltage range

±11

+15

-12

CMR

Common mode rejection ratio (RS = 10kΩ)

Tmin ≤ Tamb ≤ Tmax

IOS

Output short-circuit current

Tmin ≤ Tamb ≤ Tmax

±Vopp

Output voltage swing

RL = 2kΩ

RL = 10kΩ

Tmin ≤ Tamb ≤ Tmax

RL = 2kΩ

RL = 10kΩ

13.5

Slew rate, Vi = 10V, RL = 2kΩ, CL = 100pF, unity gain

V/µs

Rise time, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain

0.1

µs

Kov

Overshoot, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain

GBP

Gain bandwidth product, f = 100kHz, Vin = 10mV, RL = 2kΩ, CL = 100pF

2.5

MHz

Input resistance

1012

THD

Total harmonic distortion

f= 1kHz, Av= 20dB, RL= 2kΩ, CL=100pF, Vo=2Vpp

0.01

Equivalent input noise voltage

RS = 100Ω, f = 1KHz

∅m

Phase margin

Degrees

The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction

temperature.

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