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STTH16003 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH16003
功能描述  High frequency secondary rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH16003 数据表(HTML) 3 Page - STMicroelectronics

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STTH16003
Characteristics
3/7
Table 5.
Recovery characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery time
Tj = 25 °C
IF = 0.5 A, Irr = 0.25 A
IR = 1 A
60
ns
IF = 1 A, dIF/dt = 50 A/µs,
VR = 30 V
80
ns
tfr
Forward recovery time
Tj = 25 °C
IF = 80 A
dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
1000
ns
VFP
Forward recovery voltage
5
V
IRM
Reverse recovery current
Tj = 125 °C
IF = 60 A, dIF/dt = 200 A/µs,
Vcc = 200 V
16
A
Sfactor
0.3
-
Figure 1.
Conduction losses versus
average current (per diode)
Figure 2.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
0
10203040
5060708090
100
0
10
20
30
40
50
60
70
80
90
100
P1(W)
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
IF(av) (A)
T
δ=tp/T
tp
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
200
IFM(A)
Tj=125°C
(Typical values)
Tj=25°C
Tj=125°C
VFM(V)
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
tp(s)
0
50
100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
IRM(A)
VR=200V
Tj=125°C
IF=2xIF(av)
IF=IF(av)
IF=0.5xIF(av)
dIF/dt(A/µs)



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