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STTH806D 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH806D
功能描述  Turbo 2 ultrafast - high voltage rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH806D 数据表(HTML) 4 Page - STMicroelectronics

  STTH806D Datasheet HTML 1Page - STMicroelectronics STTH806D Datasheet HTML 2Page - STMicroelectronics STTH806D Datasheet HTML 3Page - STMicroelectronics STTH806D Datasheet HTML 4Page - STMicroelectronics STTH806D Datasheet HTML 5Page - STMicroelectronics STTH806D Datasheet HTML 6Page - STMicroelectronics STTH806D Datasheet HTML 7Page - STMicroelectronics STTH806D Datasheet HTML 8Page - STMicroelectronics STTH806D Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
STTH806
4/9
Figure 7.
Softness factor versus
dIF/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
0
50
100
150
200
250
300
350
400
450
500
S factor
I
2 x I
T = 125° C
F
F(AV)
j
≤
V = 400 V
R
dI /dt(A/µs)
F
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
IRM
QRR
S factor
T (°C)
j
I=I
Reference: T =125°C
F
F(AV)
j
V =400V
R
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10.
Forward recovery time versus
dIF/dt (typical values)
0
2
4
6
8
10
12
14
0
100
200
300
400
500
V
(V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
0
20
40
60
80
100
120
140
160
180
200
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
V
=1.1 x V max.
FR
F
Figure 11.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, eCU = 35 µm)
1
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
R
(°C/W)
th(j-a)
S
(cm²)
(Cu)
D²PAK



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