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STTH2003C 数据表(PDF) 5 Page - STMicroelectronics

部件名 STTH2003C
功能描述  Hight frequency secondary rectifier
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH2003C 数据表(HTML) 5 Page - STMicroelectronics

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STTH2003C
Characteristics
5/11
Figure 7.
Softness factor (tb/ta) versus dIF/dt
(typical values, per diode)
Figure 8.
Relative variation of dynamic
parameters versus junction
temperature (reference: Tj = 125°C)
0
50
100
150
200
250
300
350
400
450
500
0.00
0.10
0.20
0.30
0.40
0.50
0.60
S factor
dI /dt(A/µs)
F
V =200V
T =125°C
R
j
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
T (°C)
j
S factor
IRM
Figure 9.
Transient peak forward voltage
versus dIF/dt (90% confidence, per
diode) (TO-220AB)
Figure 10.
Forward recovery time versus dIF/dt
(90% confidence, per diode)
Figure 11.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) (D2PAK).
0
50
100
150
200
250
300
350
400
450
500
0
2
4
6
8
10
V
(V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
0
50
100
150
200
250
300
350
400
450
500
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
V
=1.1 x V max.
FR
F
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
S(Cu)(cm²)
R
(°C/W)
th(j-a)



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