Characteristics

STTH2003C

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1

Characteristics

Note:

To evaluate the conduction losses use the following equation:

2

(RMS))

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

300

V

RMS forward voltage

30

A

Peak working forward

current

δ = 0.5

TO-220AB

Per diode

Per device

10

20

A

TO-220FPAB

Surge non repetitive forward current

110

A

Non repetitive avalanche current

5A

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value (max)

Unit

Junction to case

Per diode

2.5

°C/W

Total

1.3

TO-220FPAB

Per diode

4.6

Total

4

0.1

TO-220FPAB

Coupling

3.5

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

20

µA

30

300

(2)

Forward voltage drop

1.25

V

0.85

1

1.

2.