STK13003 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 700V

Tj = 125

BVEBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.25 A

IC = 1.5 A

IB = 0.5 A

0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.25 A

1.2

hFE

∗

DC Current Gain

IC = 0.5 A

VCE = 2 V

Group A

Group B

IC = 1 A

VCE = 2 V

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

IC = 1 A

VCC = 125 V

IB1 = 0.2 A

IB2 = -0.2 A

Tp= 25

µs

0.7

µs

INDUCTIVE LOAD

Storage Time

IC = 1 A

IB1 = 0.2 A

VBE = -5 V

L = 50 mH

Vclamp = 300 V

0.8

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups

according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

STK13003

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