STTH6006TV datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH6006TV

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Characteristics

When the diodes are used simultaneously:

∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.07 x IF(AV) + 0.011 IF

(RMS)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

1.6

° C/W

Total

0.85

Rth(c)

Coupling

0.1

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

800

(2)

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25° C

IF = 30 A

1.85

Tj = 150° C

1.10

1.40

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A, Irr = 0.25 A, IR = 1 A,

Tj = 25° C

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 30 A, dIF/dt = -100 A/µs,

VR = 400 V, Tj = 125° C

811

tfr

Forward recovery time

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

500

VFP

Forward recovery voltage

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

2.5

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