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STTH1R06RL 数据表(PDF) 2 Page - STMicroelectronics |
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STTH1R06RL 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH1R06 2/9 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.27 IF 2 (RMS) Table 4. Thermal resistance Symbol Parameter Value (max) Unit Rth(j-l) Junction to lead L = 10 mm DO-41 45 °C/W SMA 30 SMB 25 Rth(j-a) Junction to ambient (1) L = 10 mm DO-41 70 °C/W 1. Rth(j-a) is measured with a copper area S = S cm 2 (see Figure 14). Table 5. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR Reverse leakage current Tj = 25° C VR = VRRM 1 µA Tj = 150° C 10 75 VF Forward voltage drop Tj = 25° C IF = 1 A 1.7 V Tj = 150° C 1.0 1.25 Table 6. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25° C IF = 0.5 A Irr = 0.25 A IR =1 A 25 ns IF = 1 A dIF/dt = -50 A/µs VR =30 V 30 45 tfr Forward recovery time Tj = 25° C IF = 1 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 100 ns VFP Forward recovery voltage Tj = 25° C IF = 1 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 10 V |
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