STTH8003CY datasheet(2/5 Pages) STMICROELECTRONICS

部件名	STTH8003CY

功能描述	HIGH FREQUENCY SECONDARY RECTIFIERS

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

STTH8003CY

2/5

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

VR = 300 V

Tj = 25°C

µA

Tj = 125°C

800

VF **

Forward voltage drop

IF = 40A

Tj=25

°C

1.25

Tj = 125°C

0.85

Pulse test : * tp=5ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the maximum conduction losses use the following equation :

P=0.75xIF(AV) + 0.0062 IF(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case thermal resistance

Per diode

Total

0.8

0.5

°C/W

Rth (c)

Coupling

0.2

°C/W

THERMAL RESISTANCES

Symbol

Tests Conditions

Min.

Typ.

Max.

Unit

trr

IF = 0.5 A

Irr = 0.25 A

IR = 1 A

Tj = 25°C

IF =1A

dIF/dt=-50A/

µsVR =30V

IRM

Vcc = 200 V IF =40A dIF/dt = -200 A/

µs

Tj = 125°C

Sfactor

0.3

tfr

IF =40A dIF/dt = 200 A/

µs,

VFR = 1.1xVF max

Tj = 25°C

450

VFP

DYNAMIC ELECTRICAL CHARACTERISTICS

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