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STTH310 数据表(PDF) 2 Page - STMicroelectronics |
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STTH310 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STTH310 2/7 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.20 x IF(AV) + 0.075 IF 2 (RMS) Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1000 V IF(AV) Average forward current, δ = 0.5 TL = 75° C δ = 0.5 DO-201AD 3 A TL = 75° C δ = 0.5 SMC 3 IFSM Forward surge current tp = 8.3 ms Sinusoidal DO-201AD 55 A SMC 45 Tstg Storage temperature range - 50 to + 175 °C Tj Maximum operating junction temperature + 175 °C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-l) Junction to lead L = 10 mm DO-201AD 20 °C/W SMC 20 Rth(j-a) Junction to ambient L = 10 mm DO-201AD 75 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR Reverse leakage current Tj = 25° C VR = VRRM 10 µA Tj = 125° C 50 VF Forward voltage drop Tj = 25° C IF = 3 A 1.7 V Tj = 150° C 0.98 1.42 Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time IF = 0.5 A Irr = 0.25 A IR = 1 A Tj = 25° C 75 ns tfr Forward recovery time IF = 3 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25° C 300 ns VFP Forward recovery voltage 12 V |
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