STTH602C datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH602C

2/9

Characteristics

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.85 x IF(AV) + 0.033 IF

(RMS)

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(RMS)

RMS forward current

IF(AV)

Average forward current,

δ = 0.5

TO-220AB

Per diode Tc = 160° C

Per device Tc = 155° C

TO-220FPAB

Per diode Tc = 150° C

Per device Tc = 140° C

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

Tstg

Storage temperature range

-65 to + 175

° C

Maximum operating junction temperature

175

° C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB

Per diode

° C/W

Per device

3.0

TO-220FPAB

Per diode

7.5

Per device

5.25

Rth(c)

Coupling

TO-220AB

Per diode

TO-220FPAB

Per diode

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

(2)

Forward voltage drop

Tj = 25° C

IF = 3 A

0.98

1.1

Tj = 150° C

0.8

0.95

Tj = 25° C

IF = 6 A

1.1

1.25

Tj = 150° C

0.9

1.05

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

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