STTH8R06DIRG datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

Characteristics

STTH8R06

2/12

Characteristics

To evaluate the conduction losses use the following equation: P = 1.16 x IF(AV) + 0.08 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) Forward current rms

TO-220AC / TO-220FPAC / D2PAK / I2PAK

TO-220AC Ins.

IF(AV)

Average forward current

δ = 0.5

TO-220AC / D2PAK / I2PAK

Tc = 130 °C

TO-220FPAC

Tc = 85 °C

TO-220AC Ins.

Tc = 100 °C

IFSM

Surge non repetitive forward current

tp = 10ms sinusoidal

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value (max)

Unit

Rth(j-c)

Junction to case

TO-220AC / D2PAK / I2PAK

2.2

°C/W

TO-220FPAC

4.6

TO-220AC Ins.

3.8

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

400

Forward voltage drop

Tj = 25 °C

IF = 8 A

2.9

Tj = 125 °C

1.4

1.8

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min

Typ Max

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR =1 A

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V

IRM

Reverse recovery current

Tj = 125 °C

IF = 8 A, VR = 400 V,

dIF/dt = -200 A/µs

5.5

7.2

S factor Softness factor

0.3

Qrr

Reverse recovery charges

150

tfr

Forward recovery time

Tj = 25°C

IF = 8 A, dIF/dt = 64 A/µs

VFR = 1.1 x VFmax

150

VFP

Forward recovery voltage

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