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STTH602CFP 数据表(PDF) 4 Page - STMicroelectronics |
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STTH602CFP 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STTH602C 4/9 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Figure 6. Junction capacitance versus reverse applied voltage (typical values per diode) 0.0 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z th(j-c)/Rth(j-c) Single pulse TO-220FPAB tp(s) 1 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery time versus dIF/dt (typical values) 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 450 500 Q RR(nC) I F=3A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0 10 20 30 40 50 60 70 80 10 100 1000 t RR(ns) I F=3A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 9. Peak reverse recovery current versus dIF/dt (typical values) Figure 10. Dynamic parameters versus junction temperature 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 500 I RM(A) I F=3A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F=3A V R=160V Tj(°C) |
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