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STL22NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL22NF10
功能描述  N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT??LOW GATE CHARGE STripFET??II MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL22NF10 数据表(HTML) 3 Page - STMicroelectronics

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STL22NF10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) The value is rated according Rthj-F.
(2) The value is rated according Rthj-pcb.
(3) Pulse width limited by safe operating area.
(4) When Mounted on FR-4 Board of 1 inch², 2 oz Cu, t<10s.
(5) ISD
≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(6) Starting Tj = 25 oC, ID = 11 A, VDD = 30V.
(7) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 11 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
20
45
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 80V ID= 22A VGS=10V
30
6
10
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 11 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
45
10
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
5.3
22
A
A
VSD (7)
Forward On Voltage
ISD = 22 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =22 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
100
375
7.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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